Silicon Heterojunction Solar Cell
Subcategory (under Clean Energy): Cross Cutting
Technology Readiness Level (TRL): TRL 4 - Early prototype
Technology Outline (Process Description)
The research activity at Photovoltaics lab, at IIT Madras focusses on fabricating silicon heterojunction (SHJ) solar cells and developing it further to make a two terminal stacked tandem cell by series integrating a metal halide perovskite as top cell. The processing is at temperatures completely below 200 oC (unlike the conventional high temperature processing of silicon bases devices). To that end, (very high frequency) plasma (PECVD) and atomic layers deposition (ALD) processes are developed and employed for growing multiple layered stacks consisting of ETL, HTL, Passivation and TCO layers on textured silicon wafers. To increase the temperature window of cell processing and stability of carrier life time, the SHJ deposition scheme is adapted to make carrier selecting contact (CSC) solar cells, replacing the amorphous silicon layers with metal oxide layers. The static deposition technology is transferred to the dynamic deposition inline tool at BHEL, ASSEP Gurgaon to fabricate 5’x5’ SHJ solar cells.
Salient Features/Advantages
- A comprehensive collection of (VHF)PECVD multi- chamber and ALD tools for thin films It ensures controlled growth of manometer scale layers, necessary of SHJ solar cells.
- SHJ and CSC solar cells are extremely relevant to Indian condition; (i) Efficiency is least affected at high ambient temperatures, (ii) Perfect for roof-top application
- The SHJ/Perovskite tandem cells can cross the theoretical efficiency limit of Si (~ 30%).
Key Outcomes
- A state of the art photovoltaic lab to fabricate solar cells on commercial size wafers (wafer-in and cell-out), complete with all the modern characterization tools has been established.
- An excellent carrier life time of 24ms is achieved for passivated industrial sized (5”x5”) and grade (Cz) n-type silicon wafers, reaching its bulk value. Implied Voc of 0.704V and a low surface recomb. velocity of 3.7 ms.
- Perovskite cell (as Top cell) has reached 15% efficiency.
IP Protection details
- Patent filed (Title, national/International): Nil
- Patents Granted: Nil
- Copyrights obtained /progress on commercialisation /Pl. specify connect with industry: Nil
Contact details (for more information)
- Nodal Person name: Dr. Jatin Rath, Professor, Dept. Physics, I.I.T Madras
- Email ID: jkr@iitm.ac.in, J.K.Rath@uu.nl
- Organisation name (Relevant link/web page): https://physics.iitm.ac.in/faculty-inner.php?fuid=46
Supporting Photographs/Images

Organizations involved in the development (logo/name) DST Solar Energy Harnessing Center (DSEHC) |