GaN-Based Power Modules
Subcategory (under Clean Energy): Smart Grid
Technology Readiness Level (TRL): TRL 4 - Early prototype
Technology Outline (Process Description)
The work has demonstrated a platform technology using Gallium Nitride-based High Electron Mobility Transistors. The tran- sistors show exceptional performance in terms of the current drive, breakdown voltage, and switching characteristics. GaN- based power transistors have been used in the demonstration of power converters with very high efficiency. Two generations of prototype converters have been demonstrated and tested for various applications.
Salient Features/Advantages
- Gallium nitride-based high electron mobility transistors have been demonstrated as a platform technology that can be tuned and scaled up for various applications
- Power converters using GaN-based power transistors have been designed, fabricated, and characterized. They show exceptional performance in terms of efficiency at a very small form factor
Key Outcomes
- GaN-based enhancement mode high electron mobil- ity transistors with very high breakdown voltage
- GaN-based depletion mode high electron mobility transistors for solid-state circuit transistors for solid-state circuit breakers
- GaN-based power converters with high efficiency
IP Protection details
- Patent filed (Title, national/International): GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors
- Patents Granted: TEMP/E-1/18598/2021-MUM
- Copyrights obtained /progress on commercialisation /Pl. specify connect with industry: In discussion with industry for translation
Contact details (for more information)
- Nodal Person name: Prof. B. G. Fernandes, Prof. Dipankar Saha
- Email ID: bgf@ee.iitb.ac.in dsaha@ee.iitb.ac.in
- Organisation name (Relevant link/web page): IIT Bombay
Supporting Photographs/Images
Organizations involved in the development (logo/name) Indian Institute of Technology (IIT) Bombay |