Enhancement of Hydrogen Storage in Thermally Reduced Graphene Oxide after Porous Silicon Nanoparticles Decoration (stabilizer) Near Ambient Temperature
Subcategory (under Clean Energy): Hydrogen
Technology Readiness Level (TRL): TRL 4 - Early prototype
Technology Outline (Process Description)
Graphene Oxide (GO) was synthesized by the modified Hummers method, involving the addition of 2g graphite powder (2- 11 µm size) to a solution of HNO3 (13.2 ml, 69%) and H2SO4 (80 ml, 98%) in a 1000 mL flask, followed by continuous stirring for 40 minutes in an ice bath (10-20 °C). Subsequently, 12 g KMnO4 (99%) was added and stirred 2 hours. After removing the ice bath, 100 mL of DI water was added, raising the temperature to 95 °C. Dropwise H2O2 (30%) was added to the solution to quench oxidation, and the solution turned yellow; then, the solution was allowed to settle for 16 hours. GrO residue was obtained by rinsing with HCl (36 %) and DI water, then exfoliated using 24 hours sonication. Thermal reduction of GO (TrGO) at 180°C for 40 min. Porous Si (PS) is synthesized by anodization on a Si wafer, followed by electropolishing to remove the PS film. PS-decorated TrGO was prepared by hand grinding the PS and TrGO in a ratio of 1:4 (weight).
Salient Features/Advantages
- The high gravimetric density of hydrogen (set for onboard materials at 50 wt.%) is obtained at 40 °C and 50 bar
- The produced material is lightweight and easy to handle
- The composite can be produced facilely, and bulk production is possible
- Improved isosteric heat of adsorption of hydrogen molecules on TrGO surface due to PS decoration compared to other graphene derivatives
- Fulfills the criteria set by the DOE USA
Key Outcomes
- The decoration of PS alters the surface properties of TrGO by creating high-energy active sites and defects on the surface.
- The PS-decorated TrGO shows a higher bond strength (isosteric heat of adsorption) between hydrogen molecules and the surface, increasing thermal
- PS acts as a ‘stabilizer’ to improve the thermal stability of hydrogen molecules on the
- Exceptional enhancement in hydrogen storage capacity of TrGO at 40 °C and 50 bar
IP Protection details
- Patent filed (Title, national/International): Enhancement of Hydrogen Storage in Thermally Reduced Graphene Oxide after Porous Silicon Nanoparticles Decoration (stabilizer) Near Ambient Temperature (India Patent Application TEMP/E-1/46842/2023-KOL, Filed June 15, 2023)
- Patents Granted: Nil
- Copyrights obtained /progress on commercialisation /Pl. specify connect with industry: Nil
Contact details (for more information)
- Nodal Person name: Prof. Paresh Kale
- Email ID: pareshkale@nitrkl.ac.in
- Organisation name (Relevant link/web page): National Institute of Technology, Rourkela, Odisha
Supporting Photographs/Images

Organizations involved in the development (logo/name) National Institute of Technology, Rourkela, Odisha DST-IIT Bombay Energy Storage Platform on Hydrogen |