Equipment and process development for crystalline silicon−based heterojunction (SHJ) solar cells using Hot−wire chemical vapour deposition (HWCVD) technique. DST/TMD/SERI/D33(G)
Subcategory (under Clean Energy): Solar (PV)
Technology Readiness Level (TRL): TRL 5 - Large prototype
Technology Outline (Process Description)
Developed an industry−friendly process for fabricating Silicon heterojunction (SHJ) solar cells. The SHJ solar cell involves an intrinsic hydrogenated amorphous silicon (a−Si:H) thin film on a c−Si wafer, followed by a doped a− Si:H emitter layer. We employ a low−temperature process for the fabrication reducing the thermal budget. All the amorphous silicon layers are deposited using the HWCVD technique. To realize these SHJ solar cells on a 6”x6” area with a simplified processing steps, we designed and constructed an indigenous multi−chamber fabrication tool employing HWCVD (a low−cost processing technology). This tool comprises a load−lock, substrate transfer chamber, and separate reactors for depositing individual intrinsic and doped silicon films. It also comprises an RF sputter reactor for transparent conducting oxide (TCO) or metal deposition. Since cell fabrication does not incorporate sophisticated steps such as photolithography, its upscaling for industry integration will prove significantly easier.
Salient Features/Advantages
The tool has been designed to improve and simplify the cell fabrication process to realize the “Substrate−In & Solar Cell−Out” Concept.
For the first time in India, we have fabricated one of a kind rotating magnetic field RF sputtering reactor employing a 10−inch sputter target.
Due to the use of the HWCVD technique, the ownership cost of the fabrication tool is significantly low compared to that of PECVD commercial tools.
Key Outcomes
a-Si:H passivation: low defect density (5×1016cm−3) and abrupt a−Si/c−Si interface (τeff) ⁓1ms.
Doped layers: Highly conductive doped layers (p−type − 24 Ω−1cm−1 & n−type − 33 Ω−1cm−1).
TCO: High conductivity (2.5×103 Ω−1cm−1) & high transmittance (>80%) Indium Tin Oxide.
Solar cells: 10−13% efficient SHJ solar cells fabricated on polished and textured c−Si wafers.
Technological capability SHJ cells on M2 WAFERS
IP Protection details
- Patent filed (Title, national/International): Nil
- Patents Granted: Nil
- Copyrights obtained /progress on commercialisation /Pl. specify connect with industry: Nil
Contact details (for more information)
- Nodal Person name: R. O. Dusane
- Email ID: rodusane@iitb.ac.in
- Organisation name (Relevant link/web page): IIT Bombay, http://www.hwcvpiitb.co.in/
Supporting Photographs/Images


Organizations involved in the development (logo/name) IIT Bombay ProVak, Pune |